Mode stabilized semiconductor laser
AssigneeBell Telephone Laboratories, Incorporated
InventorJohn A. Copeland, III
Life of this patent
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Abstract
Longitudinal mode control is achieved in a heterojunction semiconductor laser (201-208) by doping the active region (203) of the laser with a deep level electron or hole trap. The trap is chosen to have a carrier capture cross section .sigma..sub.e and an optical cross section .sigma..sub.o such that the ratio of P, the average number of photons per cubic centimeter, to P.sub.s is between 0.1 and 100 where P.sub.s is equal to (N.sigma..sub.e V/.sigma..sub.o C.sub.o), N is the carrier density, V is the carrier thermal velocity, and C.sub.o is the speed of light in the material. In a specific embodiment the active region is bombarded by photons to achieve deep level electron traps in the active region.
Claims6
In a semiconductor diode laser having an active region layer (203) and a confinement layers (202 and 204) bordering said active region layer, at least one of the confinement layers having a lower refractive index than the refractive index of the active region layer, and at least one of the confinement layers being doped differently than the active region layer;
- characterized in that
- the active region layer is doped with deep level traps having a carrier capture cross section, .sigma..sub.e, and an optical cross section, .sigma..sub.o, such that the ratio of P, the average number of photons per cubic centimeter, to P.sub.s is between 0.1 and 100 where P.sub.s =(N.sigma..sub.e V/.sigma..sub.o C.sub.o), N is the carrier density, V is the carrier thermal velocity and C.sub.o is the speed of light in the material.
A semiconductor diode laser comprising an active region layer, confinement layers bordering said active region layer, electrode means for providing a potential between said confinement layers, and means for reflecting light energy at opposite ends of said active region layer thereby forming an optical resonant cavity in said active region layer,
- characterized in that
- the active region layer is doped with deep level traps having a carrier capture cross section, .sigma..sub.e, and an optical cross section, .sigma..sub.o, such that the ratio of P, the average number of photons per cubic centimeter, to P.sub.s is between 0.1 and 100 where P.sub.s =(N.sigma..sub.e V/.sigma..sub.o C.sub.o), N is the carrier density, V is the carrier thermal velocity and C.sub.o is the speed of light in the material.
Dependencies are inferred from the claim text.