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US 4,305,011 AGranted
Reference voltage generator
AssigneeCommissariat a l'Energie Atomique
InventorsLuc Audaire, Bernard Baylac, Gerard Merckel
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AssigneeCommissariat a l'Energie Atomique
InventorsLuc Audaire, Bernard Baylac, Gerard Merckel
Estimating the term…
A reference voltage generator comprising two MOS-type transistors T.sub.1 ' and T.sub.2 ' produced on the same substrate, the channels of these transistors having the respective lengths L.sub.1 and L.sub.2 and the respective widths Z.sub.1 and Z.sub.2, one of the transistors T.sub.2 ' having a channel, only one dimension of which is of the same order of magnitude as the corresponding dimension of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and this drain when the transistor is operating, the other dimension being large in relation to the corresponding dimension of said extension of the space charge zone, the other transistor T.sub.1 ' having a channel the two dimensions of which are large in relation to the corresponding dimensions of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and drain when the transistor is operating, and further comprising means for providing the difference in the threshold voltages of the transistors T.sub.1 ' and T.sub.2 ', this difference in threshold voltages representing the reference voltage.
A reference voltage generator, characterised in that it comprises two MOS-type transistors T.sub.1 ' and T.sub.2 ' produced on the same substrate, the channels of these transistors having the respective lengths L.sub.1 and L.sub.2 and the respective widths Z.sub.1 and Z.sub.2, one of the transistors T.sub.2 ' having a channel, only one dimension of which is of the same order of magnitude as the corresponding dimension of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and this drain when the transistor is operating, the other dimension being large in relation to the corresponding dimension of said extension of the space charge zone, the other transistor T.sub.1 ' having a channel the two dimensions of which are large in relation to the corresponding dimensions of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and drain when the transistor is operating, and that it comprises means for providing the difference in the threshold voltages of the transistors T.sub.1 ' and T.sub.2 ', this difference in threshold voltages representing the reference voltage.
Dependencies are inferred from the claim text.