Plasma etching device and process
AssigneeRCA Corporation
InventorAlfred J. Pierfederici
Life of this patent
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Abstract
A plasma etching device having a quartz cylinder surrounded by RF energized electrodes or coils, contains a slotted aluminum tube into which wafers for etching are supported and processed. Each of the slots of the aluminum tube is provided with a shield extending longitudinally of the slot to intercept optical radiation, including deleterious ultraviolet (UV) radiation, of the plasma from entering the tube while still permitting the active etchant particles to pass into the tube to act on the wafers.
Claims8
In a plasma etching device comprising a non-metallic, inorganic, hollow chamber having an end wall, an inner wall and an opposing front opening, and means for generating RF energy disposed about the inorganic chamber, wherein the improvement comprises:
- a chamber of electrically conductive unperforated sheet of metal, except for at least one certain opening to pass sufficient reactant gas therethrough, said conductive chamber being positioned within and, spaced from the inner wall of the inorganic chamber, the conductive chamber being sufficiently large in diameter to contain the material to be etched, and
- a member extending over the certain opening and spaced from the certain opening to provide a gap between the member and the certain opening serving to shield optical radiations from flowing through the certain opening.
Dependencies are inferred from the claim text.