Method of delineating a desired integrated circuit pattern upon a circuit substrate

Method of delineating a desired integrated circuit pattern upon a circuit substrate, said method consisting of:

• premixing about 5.times.10.sup.-2 gram of potassium persulfate, about 0.4 gram of sodium lauryl sulfate and about 100 grams of distilled water, adding a mixture of about 23 grams of methyl alpha-chloroacrylate and about 27 grams of methacrylonitrile thereto, heating the reaction at 50 degrees with vigorous magnetic stirring for about 14 hours under a slow continuous nitrogen purge, coagulating the resulting copolymer latex from methanol, dissolving the powder in nitromethane to form a viscous solution and applying the solution to an oxidized silicon substrate in which the thickness of the oxide layer is about 0.3 micron, spinning the substrate to form a smooth, uniform resist film of about 0.3 to 1.0 micron in thickness, heating the resist film in-vacuo at about 130-160 degrees C. for about 30 minutes, exposing the resist film on the substrate to be patterned to an electron beam test pattern generated by a flying spot scan-controlled electron beam machine operating at 10 keV until exposures greater than 1.5.times.10.sup.-5 C/cm.sup.2 are obtained, and selectively removing the exposed resist regions of the film to the substrate by an 27 second spray development in a 4:1 mixture of benzonitrile and toluene.