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US 4,303,931 AGranted
Monolithic electroluminescent semiconductor assembly
AssigneeU.S. Philips Corporation
InventorMichel Gaffre
Life of this patent
Estimating the term…
Abstract
A monolithic semiconductor assembly is comprised of electroluminescent diodes emitting radiations of different wavelengths. The junctions of the diodes are established in different sectors of a layer of a semiconductor compound where the concentration of a given impurity is different. The various diodes are isolated from one another.
Claims7
A monolithic electroluminescent semiconductor assembly comprising
- a semiconductor substrate,
- a homogeneous epitaxial semiconductor layer on said semiconductor substrate and being of the same semiconductor compound as said substrate, said semiconductor layer comprising a first layer portion on said semiconductor substrate having a first impurity doping concentration and a second layer portion on said first layer portion having a second impurity doping concentration lower than that of said first impurity concentration and of the same impurity type,
- at least one first electroluminescent diode junction formed in said first layer portion,
- at least one second electroluminescent diode junction emitting radiation of a different wavelength formed in said second layer portion, wherein said first and second diode junctions radiate independently, and
- a plurality of insulating partitions separating said first and second diode junctions.
2 more elements
Dependencies are inferred from the claim text.