Method of peeling thin films using directional heat flow
OwnerMelvin S. Cookinventor
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Abstract
A method is disclosed for peeling thin layers of crystal from the substrates on which they have been grown. A thin layer of single-crystal material is grown on a single-crystal substrate having a lower melting point temperature than the layer. The layer and substrate are then brought to the melting point temperature of the substrate material, and the layer is contacted to a hot object so that heat flows through the layer to the substrate for liquifying the substrate material contiguous to the layer. The layer is peeled from the substrate where such liquification has occurred.
Claims3
A method of producing films of crystal comprising the steps of epitaxially growing a solid layer of crystal on a solid substrate, the material adjoining the interface of said layer of crystal and said substrate of one of said layer of crystal and said substrate having a melting point temperature lower than that of the material adjoining said interface of the other of said layer of crystal and said substrate, adding heat to said material adjoining said interface having said lower melting point temperature by contacting said other of said layer of crystal and said substrate to a heat source such that material adjoining said interface having said lower melting point temperature liquifies, the remaining material having said lower melting point temperature remaining in solid form, and separating said layer of crystal from said substrate at said liquified material to form a film of crystal.
Dependencies are inferred from the claim text.