CMOS Circuit for converting a ternary signal into two binary signals, and use of this CMOS circuit
AssigneeITT Industries, Inc.
InventorsWolfgang Gollinger, Joachim Grosse, Arnold Uhlenhoff
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Abstract
The ternary-binary conversion is reached by two CMOS inverters dimensioned extremely unsymmetrically with regard to their W/L ratio and connected in parallel at their inputs. By further addition of a NAND or a NOR gate the circuit can be used in an integrated circuit as option releasing stage without additional terminal for the option signal which has only to be chosen as the middle value of the ternary signal whereas its lower and upper values are the binary signals.
Claims12
A circuit arrangement using monolithic integrated, complementary insulated-gate field-effect transistor technology serving to convert a ternary digital signal having three possible states into two binary digital signals having two possible states, comprising:
- first and second CMOS inverters each being highly unsymmetrical with respect to the channel-width-to-length ratios;
- a ternary-signal input connected to the interconnected inputs of said first and second CMOS inverters;
- the N-channel transistor of the first CMOS inverter and the P-channel transistor of the second CMOS inverter have both either a small or a large W/L ratio, whereas the P-channel transistor of the first CMOS inverter and the N-channel transistor of the second CMOS inverter have both either a large or small W/L ratio and the output of said first and the output of the second CMOS inverter are the outputs for the two digital signals.
Dependencies are inferred from the claim text.