Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material

Abstract

Disclosed is a substance-sensitive semiconductor and a method for making the same, wherein a substance-sensitive material is combined with photoresist material and applied to an electronic device structure. The substance-sensitive material may be applied before or after the photoresist material, or even may be combined with the photoresist material to form a substance-sensitive layer of photoresist material on the semiconductor. The photoresist material is then processed, such that unwanted, or undesirable areas are free from the photoresist material and the areas of desired substance sensitivity have a fully processed photoresist layer. A further embodiment of the present disclosure provides multiple layers sensitive to different ions on a single sheet of semiconductor or electromagnetically active material.

Dependencies are inferred from the claim text.