Method of fabricating semiconductor junction device employing separate metallization
OwnerHung Chang Lininventor
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Abstract
A method of fabricating a p-n junction device such as solar cells using metal contacts for p regions and n region heat-treated at two different temperatures. A metal with low work functions is heated first to a high temeperature for making ohmic contact to a p-type semiconductor substrate, and then at low temperature for contacting the n-type region. A metal with high work function is heated first to a high temperature for contacting an n-type semiconductor substrate and then at low temperature for contacting the p-type region.
Claims5
A method of contacting a semiconductor junction device comprising the steps of forming a pn or an np junction on a doped semiconductor substrate of one conductivity type by creating a thin layer of opposite conductivity type on said substrate, depositing a layer of a metal on said substrate, heating said substrate and said metal at first temperature to form an ohmic contact, depositing a layer of the same metal on said thin layer of opposite conductivity type, heating said substrate and said metal to a second temperature which is lower than said first temperature, said second temperature being sufficient to form an ohmic contact between said metal and said thin layer but insufficient to form an ohmic contact between said metal and said substrate.
Dependencies are inferred from the claim text.