Solid-state imaging device
AssigneesHitachi, Ltd., Hitachi Denshi Kabushiki Kaisha
InventorsIwao Takemoto, Masaharu Kubo, Shinya Ohba, Shuhei Tanaka, Masakazu Aoki
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Abstract
In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.
Claims11
A solid-state imaging device comprising a two-dimensional array of photo-electric conversion elements, vertical and horizontal switching MOS transistors for transferring, to a signal output terminal, signals detected by said photo-electric conversion elements, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of said vertical and horizontal switching MOS transistors respectively, and a switching gate MOS transistor connected between the horizontal switching MOS transistors and the associated signal output terminal.
Dependencies are inferred from the claim text.