Microwave diode with high resistance layer
AssigneeRaytheon Company
InventorsMark B. Goldman, Dana W. Kintigh, Henri R. Chalifour
Life of this patent
Estimating the term…
Abstract
A microwave diode having an integrally formed fixed resistance layer to provide a monolithic structure. The resistance layer has an approximate value of 50-ohms when the diode is in the forward biased state. The diode in monolithic form is adaptable to be soldered directly to a housing electrically connected to the ground plane of the microstrip circuit. In the reverse bias state the junction capacitance of the structure is small enough, typically 0.02 to 0.05 pf, to isolate the diode from the microstrip circuit thereby minimizing the insertion loss of the device. Packaged varieties of the monolithic structure are applicable to stripline, coaxial and waveguide microwave circuits.
Claims1
A microwave circuit comprising:
- (a) a microwave transmission line having a predetermined impedance, such transmission line comprising a strip conductor and a ground plane conductor separated by a dielectric;
- and
- (b) a monolithic semiconductor body comprising:
- (i) a diode having a pair of semiconductor layers of opposite conductivity type;
- and
- (ii) a resistive layer disposed adjacent one of the pair of layers, said resistive layer having a resistance matched to the predetermined impedance of the transmission line, said diode and resistive layer being serially connected to the strip conductor and the ground plane conductor, the resistive layer being disposed adjacent the ground plane conductor.
Dependencies are inferred from the claim text.