Lead-doped silicon with enhanced semiconductor properties

Process for production of poly-crystalline silicon having semiconductor properties with improved optoelectronic properties, which comprises forming the poly-crystalline silicon by thermal decomposition of a reaction mixture of a gaseous silicon compound selected from the group consisting of silicon chloroform and silicon tetrachloride mixed with a carrier gas containing hydrogen, depositing said poly-crystalline silicon onto a silicon carrier body which is heated by means of direct passage of electric current, and thereafter diffusing lead into the poly-crystalline silicon.

Process for the production of poly-crystalline silicon having semiconductor properties with improved optoelectric properties, which comprises forming the poly-crystalline silicon by thermal decomposition of a reaction mixture of a gaseous silicon compound selected from the group consisting of silicon chloroform and silicon tetrachloride mixed with a carrier gas containing hydrogen, depositing said poly-crystalline silicon into a silicon carrier body which is heated by means of direct passage of electric current to form a poly-crystalline silicon rod, subjecting said silicon rod to crucible-free zone melting, and doping said rod with gaseous lead during the crucible-free zone melting.

A method for increasing the efficiency of an optoelectronic device containing a silicon component having semiconductor properties, which comprises incorporating in silicon to be used as said silicon component, lead as an agent which increases the carrier life time wherein the amount of lead addition is 10.sup.-6 to 10.sup.-9 parts by weight of silicon.

A method of increasing the efficiency of a solar cell containing a silicon component having semiconductor properties, which comprises incorporating in silicon to be used as said silicon component, lead as an agent which increases the carrier life time to effect an increase in the efficiency factor of the cell wherein the amount of lead addition is 10.sup.-6 to 10.sup.-9 parts by weight of silicon.

An optoelectronic device containing a silicon component having semiconductor properties, said silicon having incorporated lead as an agent which increases the carrier life time.

A solar cell containing a silicon component having semiconductor properties, said silicon having lead as an agent which increases the carrier life time to effect an increase in the efficiency factor of the cell.