Method of providing a conductor layer pattern having parts which are present at a small separation in the manufacture of semiconductor devices

A method of forming on a substrate surface a conductor layer pattern having portions which are at least locally separated by small mutual distances, comprising the steps of:

• (a) forming a mask over said substrate surface, said mask comprising a first layer having a plurality of juxtaposed apertures extending therethrough and being at least locally separated by narrow mask portions, and a second layer supporting said first layer above said substrate surface and having a plurality of openings between said apertures and said substrate surface, said openings being larger than said apertures, said second layer having a predetermined thickness for separating said first layer from said substrate surface, and
• (b) depositing single conductive layers of a material in at least two different directions through each of said apertures onto said substrate surface, both of said different directions being angularly disposed to a normal to said substrate surface, and said deposition in each of said different directions through a given aperture contributing to formation of a single conductor layer portion on said substrate surface, said single conductor layer portions formed through each of said apertures being relatively disposed on said substrate surface at separations being smaller than widths of said narrow mask portions between apertures, said separations being smaller than 10 microns, and said separations being smaller than respective widths of said apertures.