Method of making a light emitting diode
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsSusumu Koike, Hitoo Iwasa
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Abstract
A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps of growing a first p-type epitaxial layer from a gallium melt containing Zn, and Ga.sub.2 O.sub.3 and GaP on an n-type GaP substrate, or on an n-type epitaxial layer formed on an n-type GaP substrate, at a cooling rate greater than 3.degree. C./min., and growing a second p-type epitaxial layer from the gallium melt on the first p-type epitaxial layer at a cooling rate less than 1.5.degree. C./min. This procedure makes the p-type carrier density high at the surface region of the second p-type epitaxial layer and the density of Zn-O pairs high in the first p-type epitaxial layer.
Claims8
A method of making a light emitting diode using a liquid phase epitaxial method comprising the steps of,
- (a) growing a first p-type epitaxial layer from a gallium melt containing Zn, Ga.sub.2 O.sub.3 and GaP on an n-type GaP substrate at a cooling rate greater than 3.degree. C. per minute, and
- (b) growing a second p-type epitaxial layer from said gallium melt on said first p-type epitaxial layer at a cooling rate less than 1.5.degree. C. per minute.
A method of making a light emitting diode using a liquid phase epitaxial method comprising the steps of:
- (a) growing a first p-type epitaxial layer at a cooling rate greater than 3.degree. C. per minute from a gallium melt containing Zn, Ga.sub.2 O.sub.3 and GaP on an n-type epitaxial layer formed on an n-type GaP substrate, and
- (b) growing a second p-type epitaxial layer from said gallium melt on said first p-type epitaxial layer at a cooling rate less than 1.5.degree. C. per minute.
Dependencies are inferred from the claim text.