Screenable contact structure and method for semiconductor devices

A metal powder composition for deposition and firing upon a substrate, comprising

• a screenable metal powder,
• a binder,
• a vehicle,
• a metal frit for use as a liquid medium to transport the metal powder in a liquid sintering process and thereby create a coherent metal structure, and
• a fluxing agent comprising silver fluoride for dissolving insulating substances from said substrate.

A metal powder composition for deposition and firing upon a substrate, comprising

• a screenable powder of a metal having an electrical resistivity of 7.0 ohm-cm or less at 0.degree. C.,
• a binder,
• a vehicle,
• a metal frit, and
• a fluxing agent comprising silver fluoride for dissolving insulating substances from said substrate.

A metal powder composition for deposition and firing upon a substrate, comprising

• a screenable powder of a metal having an electrical resistivity of 7.0 ohm-cm or less at 0.degree. C.,
• a binder,
• a vehicle,
• a metal frit having a melting point approximately in the range of 200.degree. C. to 750.degree. C., and
• a fluxing agent comprising silver fluoride for dissolving insulating substances from said substrate.

A metal powder composition for deposition and firing upon a substrate, comprising

• a screenable metal powder selected from the group consisting of copper, nickel, aluminum, silver, gold, and combinations and alloys thereof,
• a binder,
• a vehicle,
• a metal frit selected from the group consisting of lead, tin, zinc, cadmium, indium, bismuth, antimony, aluminum, and combinations and alloys thereof,
• a semiconductor powder,
• a dopant selected from the group consisting of N and P type dopants, and
• a fluxing agent comprising silver fluoride for dissolving insulating substances from said substrate.

A metal powder composition for deposition and firing upon a semiconductor substrate, comprising

• a screenable metal powder,
• a binder,
• a vehicle,
• a metal frit for use as a liquid medium to transport the metal powder in a liquid sintering process and thereby create a coherent metal structure, and
• a powder comprising a semiconductor-dopant eutectic alloy.

A metal powder composition for deposition and firing upon a semiconductor substrate, comprising

• a screenable powder of a metal having an electrical resistivity of 7.0 ohm-cm or less at 0.degree. C.,
• a binder,
• a vehicle,
• a metal frit, and
• a powder comprising a semiconductor-dopant eutectic alloy.

A metal powder composition for deposition and firing upon a semiconductor substrate, comprising

• a screenable powder of a metal having an electrical resistivity of 7.0 ohm-cm or less at 0.degree. C.,
• a binder,
• a vehicle,
• a metal frit having a melting point approximately in the range of 200.degree. C. to 750.degree. C., and
• a powder comprising a semiconductor-dopant eutectic alloy.

A metal powder composition for deposition and firing upon a substrate, comprising

• a screenable metal powder selected from the group consisting of copper, nickel, aluminum, silver, gold, and combinations and alloys thereof,
• a binder,
• a vehicle,
• a metal frit selected from the group consisting of lead, tin, zinc, cadmium, indium, bismuth, antimony, aluminum, and combinations and alloys thereof,
• a semiconductor powder,
• a dopant selected from the group consisting of N and P type dopants,
• a fluxing agent, and
• a powder comprising a semiconductor-dopant eutectic alloy.