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US 4,291,327 AGranted
MOS Devices
AssigneeBell Telephone Laboratories, Incorporated
InventorWon-Tien Tsang
Life of this patent
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Abstract
An oxide layer (16') is formed on a GaAs body (14) by epitaxially growing a layer (12) of Al.sub.x Ga.sub.1-x As layer on a major surface (18) of the body and then thermally oxidizing the Al.sub.x Ga.sub.1-x As layer for a time period effective to convert it to an oxide. The oxidizing process is essentially self-terminating at the major surface 18. The application of this process to the fabrication of MOS capacitors and IGFETs is described.
Claims4
An MIS capacitor comprising:
- a GaAs single crystal semiconductor body,
- an insulating layer formed on a major surface of said body, and
- a metal electrode formed on said insulating layer, characterized in that:
- said insulating layer is formed by a process comprising the steps of:
- epitaxially growing a layer of Al.sub.x Ga.sub.1-x As on said body and thermally treating said Al.sub.x Ga.sub.1-x As in an atmosphere containing oxygen for a time sufficient to convert said Al.sub.x Ga.sub.1-x As layer to said insulating layer, said conversion being essentially self-terminating at said major surface.
2 more elements
Dependencies are inferred from the claim text.