Indium phosphide arsenide based devices
AssigneeBell Telephone Laboratories, Incorporated
InventorKlaus J. Bachmann
Life of this patent
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Abstract
Devices based on InAs.sub.1-x P.sub.x where 0.85.ltoreq.x<1 show advantageous properties. An exemplary device is a rectifying diode formed from indium tin oxide deposited on the subject InAs.sub.1-x P.sub.x.
Claims4
A device comprising a region of a first semiconductor material comprising InAs.sub.1-x P.sub.x in intimate contact with a region of a second material and means for applying a voltage to said first semiconductor material CHARACTERIZED IN THAT said first semiconductor material is InAs.sub.1-x P.sub.x where 0.85.ltoreq.x<1 and wherein said second material comprises a composition chosen from the group consisting of indium tin oxide and indium oxide whereby a rectifying junction is formed.
A device comprising a region of a first semiconductor material comprising InAs.sub.1-x P.sub.x in intimate contact with a region of a second material and means for applying a voltage to said first semiconductor material CHARACTERIZED IN THAT said first semiconductor material is InAs.sub.1-x P.sub.x where 0.85.ltoreq.x<1 and wherein said second material is In.sub.y Ga.sub.1-y As.
Dependencies are inferred from the claim text.