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AssigneeSiemens Aktiengesellschaft
InventorsHans-Jorg Pfleiderer, Dietrich Widmann
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An MIS-field effect transistor comprising a semiconductor member provided with an overlying insulating layer and having a source zone and a drain zone of a first conductivity type provided with respective contacting electrodes, and a gate-electrode layer disposed therebetween, with each of said areas being surrounded by a less heavily doped area of the same conductivity type. At the source side, an additional area abuts the source zone and extends to the semiconductor surface beneath the gate-electrode layer, forming a channel having a very short length. The various dopings having different penetration depths are produced by differential implantation. A windowed mask, having windows with beveled edges at the drain-zone and the source zone, is utilized as an implantation mask, which advantageously is formed by the insulating layer and/or by the gate-electrode layer. Such a field effect transistor is particularly suited for integrated semiconductor circuits due to its high breakdown voltage and high switching speed resulting from the short channel length.
An MIS field effect transistor having a short channel length, comprising a semiconductor substrate, on the surface of which there is arranged an insulating layer, which is in turn, provided with a gate electrode, a drain zone and a source zone, of the first conductivity type, provided in the semiconductor substrate, which zones meet the substrate surface, an additional doped zone of the second conductivity type laying below said source zone and surrounding the latter, at least in the direction of said drain zone, and which meets the substrate surface, spaced laterally with respect to said source zone below said gate electrode layer, a second less heavily doped zone of the first conductivity type extending between the source zone and said additional zone of opposite conductivity type, a less heavily doped zone of the first conductivity type surrounding said drain zone, at least in the direction of said source zone, said zone of the second conductivity type and the less heavily doped zones of the first conductivity type containing implanted dopant particles.
Dependencies are inferred from the claim text.