Method of fabricating surface contacts for buried layer into dielectric isolated islands

A method of fabricating an integrated circuit having a plurality of dielectrically isolated islands comprising:

• etching a first surface of a substrate to form preselected portions of an isolation moat structure of preselected to be formed substrate islands using a first mask exposing said preselected portions;
• non-selectively introducing impurities into said first surface and said preselected portions of said moat to form a low resistive region along said first surface and along said preselected portions of said moat;
• etching said first surface to form a uniform isolation moat structure using a mask exposing the total isolation moat structure including said preselected portions;
• forming a dielectric layer along said first surface and said moat structure;
• covering said dielectric layer with material which over fills said moat and forms a support structure;
• reducing the thickness of said substrate from a second surface opposite said first surface sufficiently to expose portions of said support structure in said moat and form isolated substrate islands;
• and
• forming devices in said second surface of said substrate islands, said low resistive regions along said preselected island's wall forming a low resistive path to the buried low resistive region at said first surface of said preselected islands.