Semiconductor devices containing protons and deuterons implanted regions
AssigneeUnited Kingdom Atomic Energy Authority
InventorsGeoffrey Dearnaley, Kenneth Steeples, Ian J. Saunders
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Abstract
A process for manufacturing gallium arsenide devices in which regions of high resistivity are created in the gallium arsenide by subjecting the regions to bombardment by protons and then by deuterons, and devices so made.
Claims10
A process for producing regions of high resistivity in a semiconductor substrate body of the type which experience an increase in resistivity when subjected to bombardment with protons comprising the operations of implanting protons into the said regions of the substrate with energies up to a maximum value corresponding to a desired depth of penetration of the protons into the substrate, and implanting deuterons into the said regions of the substrate with energies such as to give the same depth of penetration as for the protons.
A semiconductor device comprising a substrate body including regions of low resistivity separated by regions into which protons and deuterons have been implanted to form substantially uniform layers of high resistivity and dimensions such as to isolate electrically the regions of the substrate of low resistivity.
Dependencies are inferred from the claim text.