Method of making a strain buffer for a semiconductor device
AssigneeGeneral Electric Company
InventorsRobert E. Hysell, Francis W. Kalkbrenner
Life of this patent
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Abstract
A thermally and electrically conductive strain buffer for a semiconductor device is made by a method that comprises the steps of (a) providing a plurality of straight, equal-length strands of copper, with the strands aligned such that their lengths are substantially parallel and their ends define a pair of opposing surfaces and (b) closing packing the strands together. Then, layers of highly conductive metal are deposited on said opposing surfaces, and the deposited metal layers provide sufficient structural integrity to hold the strands together so that the resulting strain buffer can be manipulated with substantially no break-up thereof and with substantially no loss of individual ones of the strands.
Claims24
A method of making a thermally and electrically conductive strain buffer for a semiconductor device, the strain buffer including a plurality of individual copper strands, comprising the steps of:
- a. providing a plurality of substantially straight strands of copper, said strands being aligned such that their lengths are substantially parallel, each of said strands being of substantially the same length, the respective ends of each of said strands defining a pair of opposing surfaces;
- b. closely packing said strands together to remove substantially all interstitial voids between said strands;
- c. cleaning said ends of said strands, and then,
- d. depositing by vacuum deposition a layer of highly electrically and thermally conductive metal having a melting point greater than 350.degree. C. on at least one of said opposing surfaces defined by said respective ends of said strands, wherein said deposited metal layer provides sufficient structural integrity to hold said strands together so that the resulting strain buffer can be manipulated with substantially no break-up thereof and with substantially no loss of individual ones of said strands.
A method of making a strain buffer for use in combination with a semiconductor device assembly, comprising the steps of:
- a. providing a plurality of substantially straight strands of copper wire, said strands being aligned such that their lengths are substantially parallel, each of said strands being of substantially the same length, the respective ends of each of said strands defining a pair of flat opposing surfaces;
- b. packing said strands together to a density of about 90% of that of solid copper,
- c. cleaning said ends of said strands;
- d. vacuum depositing a layer of aluminum on each of said opposing surfaces defined by said respective ends of said strands each of said deposited metal layers being from about 2 to about 75 microns in thickness.
Dependencies are inferred from the claim text.