Apparatus for programming a dynamic EPROM
AssigneeMotorola, Inc.
InventorStephen L. Smith
Life of this patent
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Abstract
An insulated-gate field-effect-transistor (IGFET) quasi-static decoder for programming an electronically-programmable read-only memory (EPROM) applies to the floating gate of selected memory devices a programming voltage. Prior to selection, each row and column conductor of the memory is latched at a first voltage. Precharge circuitry responsive to a single precharge pulse establishes an enabling voltage for unlatching a selected row and column. The selected row and column is then coupled via a switch to a source of programming voltage.
Claims12
A circuit for providing a programming signal from a first source of supply voltage to row or column conductors of an electronically programmable read-only-memory, comprising:
- first means associated with each of said conductors for latching each of said conductors at a voltage below that of said first source;
- second means associated with each of said conductors for establishing an enabling voltage with a single precharge pulse;
- first switching means coupled to said enabling voltage and responsive thereto for unlatching a selected one of said conductors;
- and
- third means associated with each of said conductors for coupling said first source to said selected one of said conductors.
Dependencies are inferred from the claim text.