Dense dry etched multi-level metallurgy with non-overlapped vias
AssigneeIBM Corporation
InventorsGeorge E. Alcorn, Raymond W. Hamaker, Geoffrey B. Stephens
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Abstract
A double level metal interconnection structure and process for making same are disclosed, wherein an etch-stop layer is formed on the first metal layer to prevent over-etching thereof when forming the second level metal line in a via hole in an insulating layer thereover, by means of reactive plasma etching. The etch-stop layer is composed of chromium and the reactive plasma etching is carried out with a halocarbon gas.
Claims1
A double level metal interconnection structure having an etch-stop on the first level metal to prevent overetching thereof when forming the second level metal line in a via hole thereover, comprising:
- a first metal layer formed on a substrate in the shape of a conductor line;
- a reactive ion etch resistant chromium metal layer formed on the surface of, aligned over and in the shape of said first layer of metal;
- an insulating layer formed over said etch resistant metal layer with a via hole having a first diameter formed therethrough over said first level metal layer;
- a third metal layer reactively ion etched in a pattern on said insulating layer and in said via hole said pattern having a width less than said first diameter in said via hole, electrically contacting said etch resistant metal layer;
- whereby said first metal layer is protected from over-etching beneath said via hole.
Dependencies are inferred from the claim text.