Light-sensitive film

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0.ltoreq.x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3, whereby said light sensitive film exhibits photoconductive characteristics and wherein an n-type oxide layer is positioned between said light-sensitive film and said substrate, whereby injection of positive holes from the substrate into the light-sensitive film is prevented.

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0<x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3, and is at least 100 nm thick, whereby said light-sensitive film exhibits photoconductive characteristics and wherein an n-type oxide layer is positioned between said light-sensitive film and said substrate, whereby injection of positive holes from the substrate into the light-sensitive film is prevented.

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0<x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3, and is at least 100 nm thick, whereby said light-sensitive film exhibits photoconductive characteristics, wherein said substrate comprises a faceplate having thereon a light-transmitting conducting layer, with at least one photoconductive layer positioned on said light-transmitting conducting layer, and with the amorphous photoconductive material layer adjacent said at least one photoconductive layer, and wherein an n-type oxide layer is positioned between said light-sensitive film and said substrate, whereby injection of positive holes from the substrate into the light-sensitive film is prevented.

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0<x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3, whereby said light-sensitive film exhibits photoconductive characteristics and wherein a layer of antimony trisulfide is positioned on top of the light-sensitive film.

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1- C.sub.x ].sub.1-y [H].sub.y where 0<x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3, whereby said light-sensitive film exhibits photoconductive characteristics and wherein a layer of antimony trisulfide is positioned on top of the light-sensitive film and is at least 100 nm thick.

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0<x.ltoreq.0.3 and 0.02.ltoreq.Y.ltoreq.0.3, whereby said light-sensitive film exhibits photoconductive characteristics wherein said substrate comprises a faceplate having thereon a light-transmitting conducting layer, with at least one photoconductive layer positioned on said light-transmitting conducting layer, and with the amorphous photoconductive material layer adjacent said at least one photoconductive layer, and wherein a layer of antimony trisulfide is positioned on top of the light-sensitive film and is at least 100 nm thick.

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0<x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3, whereby said light-sensitive film exhibits photoconductive characteristics and wherein the at least one layer of the amorphous photoconductor material has a continuously varying composition with x varying from a high value of x 0.3 to a lower value less than said high value but greater than 0, from one surface to the opposite surface of said at least one layer of the amorphous photoconductive material, with a layer of (si).sub.1-y (H).sub.y adjacent the surface of the amorphous photoconductive material having the lower value of x.

An article comprising a light-sensitive film constructed of at least a single layer of at least one photoconductive material on a substrate, wherein at least one layer of said at least a single layer is made of an amorphous photoconductive material whose composition is expressed by a formula [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0<x.ltoreq.0.3 and 0.02.ltoreq. y.ltoreq. 0.3, with up to 40% of the carbon in the amorphous photoconductive material being replaced by germanium, whereby said light-sensitive film exhibits photoconductive characteristics.