Electrochemical oxidation of amorphous silicon

A method for producing a device comprising hydrogenated amorphous silicon, comprising the steps of:

• etching a surface region of said silicon to provide a standard surface;
• anodizing said etched surface in an electrolyte comprising an anodizing anion in solution with a solvent having a dielectric constant greater than or equal to about 25 wherein an electrolysis current is maintained between a cathode electrode and the silicon layer, immersed in said electrolyte and comprising an anode electrode, for a time sufficient to electrochemically grow an oxide layer of SiOx from the surface region of the silicon layer ranging in thickness from about 10 A to about 50 A;
• and applying a Schottky junction forming metal to said oxide layer.