Method of constructing and processing a diode capacitor assembly
AssigneeVaro Semiconductor, Inc.
InventorsWalter L. Wills, Herchel A. Vaughn, Larry L. Miller
Life of this patent
Estimating the term…
Abstract
Wafers of silicon semiconductor material are stacked, bonded and severed to form a plurality of semiconductor diodes. One or more capacitor bodies are physically and electrically joined with these diodes, either by means of the capacitor bodies themselves or by means of an intermediate lead frame structure, in order to facilitate the handling and processing of the assembly as a unit.
Claims8
A process for making a diode/capacitor assembly comprising the steps of:
- providing a plurality of semiconductor diodes each having an anode end and a cathode end, electrically and mechanically joining selected anode ends and cathode ends of said plurality of diodes to multiple-plate capacitor means to define an electrical circuit configuration of diodes and capacitors, and thereafter etching and passivating the assembled diodes and capacitors as a group.
A method for making a miniature voltage multiplier circuit comprising the steps of:
- providing a plurality of discrete semiconductor diodes each having an anode end and a cathode end, providing multiple-plate capacitor means, electrically and mechanically joining said multiple-plate capacitor means to selected ones of said anode ends and cathode ends to form a voltage multiplier electrical circuit configuration, and etching and passivating said assembled capacitors and diodes as a group.
A process for making a diode/capacitor assembly comprising the steps of:
- providing a plurality of semiconductor diodes each comprising a plurality of semiconductor wafers stacked to define a diode having an anode end and a cathode end, providing a dielectric body carrying a plurality of plates to define a plurality of capacitors, electrically and physically joining selected anode ends and cathode ends of said plurality of diodes to selected ones of said plates to define an electrical circuit configuration of diodes and capacitors, and thereafter etching and passivating the assembled diodes and capacitors as a group.
Dependencies are inferred from the claim text.