Method of manufacturing a semiconductor device

A method of manufacturing devices on a semiconductor wafer 23 of a first conductivity type having formed on the body 20 of the wafer 23 a masking medium 22, removing selected portions of the masking medium 22 to expose the surface of the body 20 thereby defining field regions 31 on the surface of the wafer and forming a field insulator 32, 34, 36, at the exposed locations on the surface of the body 20, wherein the improvement comprises the steps of:

• A. Removing selected portions of the remaining masking medium 22 so as to define source/drain regions 29 and interconnect runs 28 on the surface of the wafer 23,
• B. Doping the source/drain regions 29 and interconnect runs 28 to a second conductivity type 44, 46,
• C. Forming an insulator 48, 50 over the doped source/drain regions 29 and interconnect runs 28,
• D. Removing the masking medium 22 covering an electrical contact area 30,
• E. Doping the electrical contact area 30 to a second conductivity type 54,
• F. Preparing the gate and contact area 26, 30 for reception of electrical conductors 60, 61, and
• G. Placing electrical conductors 60, 61 at selected locations on the wafer 23 surface to provide electrical contact with the gate and contact area 26, 30.