HVMOSFET Driver with single-poly gate structure

A MOSFET component for use as a monolithic integrated array on a substrate having closed geometry including a drain area as a relative center axis introduced in the substrate, a source area introduced in the substrate relatively concentric and adjacent to the drain area, a channel area introduced in the substrate between the source area and drain areas which it is relatively concentric to, and a drift area introduced in the substrate between the channel area and drain area which it is relatively concentric to, comprising:

• (a) first gate means embedded in a first layer of relatively thick oxide relatively disposed over the drift area for applying a relatively high voltage potential through the first layer to the drift area for stretching out the field lines away from the drain area;
• and,
• (b) second gate means embedded in a second layer of relatively relative thin oxide relatively disposed over the channel area and introduced as part of the same relatively non-overlapping layer as said first gate means for controlling the potential and for turning on and off the current between the source and drain areas.