Methods of manufacturing semiconductor devices
AssigneeU.S. Philips Corporation
InventorKeith H. Nicholas
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device is set forth in which a masking layer is formed on part of the surface of a deposited layer of a relatively high resistivity polycrystalline semiconductor material being present on an insulating layer provided at a surface of a semiconductor body or portion thereof. A relatively low resistivity conductive region having a substantially uniform narrow line width is defined in the polycrystalline layer by effecting a diffusion process to laterally diffuse a doping element into a portion of the polycrystalline layer underlying an edge portion of the masking layer without diffusing the doping element through the insulating layer into the semiconductor body or portion thereof.
Claims14
A method of manufacturing a semiconductor device comprising a low resistivity conductive region having a substantially uniform narrow line width, said method comprising the steps of:
- (a) providing a semiconductor element having an insulating layer disposed at at least a surface part thereof, (b) depositing a layer of relatively high resistivity polycrystalline semiconductor material on said insulating layer, (c) forming a masking layer on a part of the exposed surface of said polycrystalline layer, (d) removing a part of said polycrystalline layer such that an edge thereof is exposed throughout the thickness thereof at an edge portion of said masking layer, (e) diffusing via the exposed edge portion a doping element laterally into a portion of said polycrystalline layer underlying said edge portion of said masking layer in the substantial absence of diffusing said doping element through said insulating layer itself into the semiconductor element, thereby forming said conductive region, (f) removing said masking layer, and (g) subjecting at least a part of the exposed polycrystalline layer adjacent said conductive region to an etching treatment to selectively remove undiffused portions thereof.
A method of manufacturing a semiconductor device comprising a low resistivity conductive region with a substantially uniform narrow line width and comprising at least one insulated gate field effect transistor, said method comprising the steps of:
- (a) providing a semiconductor element having an insulating layer disposed at at least a surface part thereof, (b) depositing a layer of relatively high resistivity polycrystalline semiconductor material on said insulating layer, (c) forming a masking layer on a part of the exposed surface of said polycrystalline layer, (d) removing a part of said polycrystalline layer such that an edge thereof is exposed throughout the thickness thereof at an edge portion of said masking layer, (e) diffusing via said exposed edge portion a doping element laterally into a portion of said polycrystalline layer underlying said edge portion of said masking layer without diffusing said doping element through said insulating layer itself into said semiconductor element, thereby forming said conductive region, and (f) forming from said conductive region at least part of a gate electrode for said transistor.
A method of manufacturing a semiconductor device having low resistivity conductive regions with a substantially uniform narrow line width, said method comprising the steps of:
- (a) providing a semiconductor element having an insulating layer disposed on at least a surface part thereof, (b) depositing a layer of relatively high resistivity polycrystalline semiconductor material on said insulating layer, (c) forming a masking layer on said polycrystalline layer, (d) removing any exposed portions of said polycrystalline layer such that only edges thereof are exposed throughout the thickness thereof under edge portions of said masking layer, and (e) laterally diffusing a doping element into said polycrystalline layer only at said edges thereof under said masking layer without diffusing said doping element through said insulating layer itself into said semiconductor element, thereby forming said low resistivity regions.
Dependencies are inferred from the claim text.