Opto-electronic devices based on bulk crystals of complex semiconductors
AssigneeBell Telephone Laboratories, Incorporated
InventorsKlaus J. Bachmann, Charles T. Ryan
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Abstract
Opto-electronic devices such as photodetectors have been made based on bulk crystals of Ga.sub.x In.sub.1-x P.sub.y As.sub.1-y. These bulk crystals have high purity, e.g., less than 10.sup.16 carriers/cm.sup.3 and low defect densities, e.g., less than 10.sup.6 cm.sup.-2. The properties of these crystals lead to photodetectors with good quantum efficiencies.
Claims4
A device comprising a rectifying junction between a bulk crystal and an interfacing material characterized in that said bulk crystal has a composition of Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y where 0<x.ltoreq.0.5 and 0<y<1, and has a defect density less than 10.sup.6 cm.sup.-2 whereby current carriers are generated in said bulk crystal by infrared radiation.
Dependencies are inferred from the claim text.