GaInAsP/InP Double-heterostructure lasers
AssigneeMassachusetts Institute of Technology
InventorJaw J. Hsieh
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Abstract
Double-heterostructure (DH) diode lasers based upon very thin epitaxial layers of Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such lasers involves the successive growth, on an InP substrate, of an InP buffer layer, the GaInAsP active layer and an InP top barrier layer using liquid phase epitaxy techniques to grow these layers from supercooled solutions. Stripe geometry lasers can be fabricated from these materials which emit in the 1.1-1.3 .mu.m range and are capable of cw operation for extended periods at room temperature.
Claims12
In a diode laser, the improvement wherein the diode comprises:
- a. InP substrate;
- b. a buffer layer of InP on said substrate;
- c. an active layer of Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y on said buffer InP layer, said active layer being substantially lattice-matched to said buffer layer and said active layer having a thickness of less than about 0.5 .mu.m;
- d. a barrier layer of InP on said active Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y layer;
- and,
- e. first and second ohmic contacts to said substrate and said barrier layer.
A double-heterostructure device comprising an InP substrate, an epitaxial active layer of Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y lattice-matched to said InP substrate and having a thickness of less than about 0.5 .mu.m, and a barrier layer of InP.
Dependencies are inferred from the claim text.