Method for surface treatment of phosphor particles
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsMinoru Watanabe, Mitsuhiro Oikawa, Toshio Nishimura, Masao Asada, Masao Tezuka, Tsurahide Cho
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Abstract
Disclosed is a method for surface treatment of phosphor particles which comprises forming a continuous film of silicon dioxide on the surface of each phosphor particle by treating the phosphor particle with a solution containing an aqueous solution of organic alkali and silicon dioxide dissolved therein.
Claims6
A method for surface treatment of phosphor particles consisting essentially of forming a continuous film of silicon dioxide on the surface of each phosphor particle by treating said phosphor particle with a solution containing an aqueous solution of organic alkali and silicon dioxide dissolved in said aqueous solution.
A method according to claim 1 or 3, wherein said organic alkali is a member selected from the group consisting of choline, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tributylmonoethylammonium hydroxide, trimethylmonooctylammonium hydroxide, and triethylmonophenylammonium hydroxide.
A method of forming of thin continuous silicon dioxide film on the surface of a phosphor consisting essentially of the steps of:
- (a) dissolving silicon dioxide in an organic alkali solution to form a silicon dioxide-containing solution;
- (b) adding the silicon dioxide-containing solution of step (a) to phosphor particles thereby depositing solid silicon dioxide on the surfaces of said phosphors to form a thin continuous silicon dioxide film thereon, and thereafter
- (c) drying the resulting continuous silicon dioxide film-coated particles.
Dependencies are inferred from the claim text.