Planar indium antimonide diode array and method of manufacture

A photodiode comprising:

• a wafer of n-type indium antimonide doped with telluride having a carrier concentration of 2.times.10.sup.15 and a mobility between 1.5 and 2 times 10.sup.5 ;
• said wafer having a planar surface;
• isolated pockets of p-type material imbedded in said wafer having exposed contact surface areas coplanar with said planar surface;
• a layer of silicon oxide covering said planar surface and contact surface except for a small percentage of said contact surface;
• and
• a separate electrode at each pocket covering and contacting said small percentage of contact surface and at least a continuous narrow strip of said silicon oxide surrounding said small percentage of contact surface, wherein each electrode comprises:
• a thin layer of a noble metal covering only said small percentage of contact surface area, a layer of chromium covering said noble metal and some of the surrounding silicon oxide, and a layer of gold covering said chromium.