Image forming materials and image forming process
AssigneeFuji Photo Film Co., Ltd.
InventorsAkira Nahara, Yoshihiro Ono, Tomizo Namiki, Shigeo Harada, Yuzo Mizobuchi, Tomoaki Ikeda
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AssigneeFuji Photo Film Co., Ltd.
InventorsAkira Nahara, Yoshihiro Ono, Tomizo Namiki, Shigeo Harada, Yuzo Mizobuchi, Tomoaki Ikeda
Estimating the term…
An image forming material comprising a support having thereon a layer composed of a Ge-S composition or a Ge-S-X composition wherein X represents at least one element selected from the group consisting of Al, Si, Mg, Ti, V, Mn, Co, Ni, Sn, Zn, Pd, In, Se, Te, Fe, I, P and O which undergoes a structural change capable of being detected optically, electrically or chemically upon exposure imagewise to light wherein the Ge-S or Ge-S-X composition layer has a thickness of at least about 300 A and contains therein at least one element selected from the group consisting of Ag, Cu and Pb in an amount of more than 2 atoms of Ag, Cu and/or Pb based on 100 atoms of the Ge-S composition or the Ge-S-X composition.
In an image forming material comprising a support having thereon a layer composed of a Ge-S composition or a Ge-S-X composition, wherein X represents at least one element selected from the group consisting of Al, Si, Mg, Ti, V, Mn, Co, Ni, Sn, Zn, Pd, Se, Te, Fe, I, P and O, which undergoes a structural change capable of being detected optically, electrically or chemically upon exposure imagewise to light, wherein the improvement comprises:
A method for producing an image forming material, which comprises simultaneously depositing (i) at least one element selected from the group consisting of Ag and Cu, and (ii) a Ge-S composition or a Ge-S-X composition, on a support to form a layer, wherein X represents at least one element selected from the group consisting of Al, Si, Mg, Ti, V, Mn, Co, Ni, Sn, Zn, Pd, Se, Te, Fe, I, P and O, wherein said composition undergoes a structural change capable of being detected optically, electrically or chemically upon imagewise exposure to light, said Ge-S or Ge-S-X composition layer is continuous and has a thickness of at least 300 A, and said layer contains Ag and/or Cu dispersed therein in an amount of more than two atoms based on 100 atoms of the Ge-S or Ge-S-X composition.
Dependencies are inferred from the claim text.