Method of manufacturing a device in a silicon wafer

A method of manufacturing devices in a semiconductor wafer 20 of a first conductivity type having formed on a portion of the body 22 an oxide dielectric 26 exposing active areas of the semiconductor body 22 whereat transistors are to be formed,

• characterized by:
• A. forming a polysilicon layer 28 having a predetermined resistance characteristic over the entire surface of the wafer 20;
• B. forming a silicon nitride masking layer 30 over the polysilicon layer 28;
• C. removing selected portions of the silicon nitride layer so that the silicon nitride layer will only remain over the source/drain regions 36 of the active areas and the locations of first level conductor runs 32;
• D. converting the exposed polysilicon 28 to an oxide dielectric;
• E. removing the silicon nitride covering the source/drain regions 36 and first level conductor runs 32;
• F. doping the exposed polysilicon to a second conductivity type thus increasing the conductivity of the exposed polysilicon and forming source/drain regions 46 in the semiconductor body of a second conductivity type;
• G. forming an oxide dielectric coating 52 over the entire surface of the wafer;
• H. removing the oxide dielectric coating from the gate areas 54 of the transistor being formed;
• I. forming a thin gate oxide 56 over the active surface of the wafer 20;
• J. removing the oxide dielectric coating from the interconnect work sites of the first level conductor runs 32;
• and
• K. placing electrical conductors 58 at selected locations on the wafer surface to provide electrical contact with the gate oxide 56 and contact sites of the first level conductive runs 32.