Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material

A semiconductor integrated circuit comprising a semiconductor body, a bipolar junction transistor formed in said semiconductor body adjacent to one major surface of said body, and a distributed resistor-capacitor device formed adjacent to said one major surface and adjacent to said bipolar junction transistor, said distributed resistor-capacitor device including a doped region of said semiconductor body, an insulative material on said major surface overlying said doped region, a resistive material formed on said insulative material, said resistive material comprising doped polycrystalline semiconductor material, first and second contacts to said resistive material, a capacitor contact to said doped region, said semiconductor body including an epitaxial layer with said bipolar junction transistor formed in a portion of said epitaxial layer, said distributed resistor-capacitor device being electrically isolated from said bipolar junction transistor by a groove etched through said polysilicon layer.

A semiconductor integrated circuit comprising a semiconductor body, a bipolar junction transistor formed in said semiconductor body adjacent to one major surface of said body, and a distributed resistor-capacitor device formed adjacent to said one major surface and adjacent to said bipolar junction transistor, said distributed resistor-capacitor device including a doped region of said semiconductor body, an insulative material on said major surface overlying said doped region, a resistive material formed on said insulative material, said resistive material comprising doped polycrystalline semiconductor material, first and second contacts to said resistive material, and a capacitor contact to said doped region, said semiconductor body including an epitaxial layer with said bipolar junction transistor formed in a portion of said epitaxial layer, said distributed resistor-capacitor device being electrically isolated from said bipolar junction transistor by dielectric isolation material formed in said polysilicon layer and surrounding said element.

A semiconductor integrated circuit comprising a semiconductor body, a silicon gate field effect transistor formed in said semiconductor body adjacent to one major surface of said body, and a distributed resistor-capacitor device formed adjacent to said one major surface and adjacent to said transistor, said distributed resistor-capacitor device including a doped region of said semiconductor body, an insulative material on said major surface overlying said doped region, a resistive material formed on said insulative material, said resistive material comprising doped polycrystalline semiconductor material, first and second contacts to said resistive material, and a capacitor contact to said doped region.

A distributed resistor-capacitor device comprising a semiconductor body, said semiconductor body including a doped region adjacent to a major surface of said body, an insulative material on said major surface, a doped polycrystalline semiconductor resistive material formed on said insulative material, additional insulative material over said resistive material, a conductive layer over said additional insulative material, said conductive layer and said doped region comprising capacitor plates, first and second contacts to said resistive material and a capacitor contact to at least one of said capacitor plates.

A semiconductor integrated circuit comprising a semiconductor body, an active electrical device formed in said semiconductor body adjacent to one major surface of said body, and a distributed resistor-capacitor device formed adjacent to said one major surface and adjacent to said active device, said distributed resistor-capacitor device including a doped region of said semiconductor body, an insulative material on said major surface overlying said doped region, a resistive material formed on said insulative material, said resistive material comprising doped polycrystalline semiconductor material, additional insulative material over said resistive material, a conductive layer over said additional insulative material, said conductive layer and said doped region comprising capacitor plates, first and second contacts to said resistive material and a capacitor contact to at least one of said capacitor plates.

A distributed resistor-capacitor device comprising a substrate, a doped polycrystalline semiconductor resistive material on said substrate, a dielectric layer over said resistive material, a conductive layer over said dielectric layer, first and second contacts to said resistive material, and a capacitor contact to said conductive layer.