Insulation layer reflow
AssigneesBell Telephone Laboratories, Incorporated, Western Electric Company, Inc.
InventorsRalph J. Jaccodine, Ami Kestenbaum
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Abstract
This disclosure is directed to a method of forming an interlevel dielectric glass layer (16) on a semiconductor device, the layer having a plurality of feed-through apertures (17--17) therein. A CW laser beam (29) is continuously raster scanned over the surface of the glass layer (16) to reflow the layer to densify the material and form a smooth surface topography about the apertures (17--17).
Claims9
A method of forming an interlevel glass dielectric layer in a semiconductor device, comprising the steps of:
- depositing a layer of glass dielectric material on a partially completed semiconductor device;
- forming feed-through apertures in the glass dielectric material;
- and
- exposing the apertured glass dielectric layer to high energy laser radiation which is selectively coupled to said layer to reflow the layer to form a smooth surface topography around said apertures without substantially heating said partially completed semiconductor device.
A method of forming a glass dielectric layer in a semiconductor device, comprising the steps of:
- vapor depositing a layer of phosphorous doped silica glass on the surface of a semiconductor device;
- forming feed-through apertures in the glass layer;
- and
- raster scanning a high energy laser beam over the apertured glass layer to simultaneously densify the vapor deposited glass layer and form a smooth surface topography about said feed-through apertures without substantially heating and thereby altering the properties of said semiconductor device therebelow.
Dependencies are inferred from the claim text.