R.F. Sputtering apparatus including multi-network power supply
AssigneeCoulter Systems Corporation
InventorHarold J. Weber
Life of this patent
Estimating the term…
Loading patent…
AssigneeCoulter Systems Corporation
InventorHarold J. Weber
Estimating the term…
Apparatus for radio frequency sputtering in the megahertz range, primarily higher than about six megahertz, in which the target and anode electrodes are at a low input impedance reactively such that the transfer of power to the target for practical sputtering is normally difficult. The useful plasma which provides the sputtering action has an effective high impedance which obtains between the electrodes during the sputtering process, this high impedance being shunted by a capacitive reactance made up of parasitic paths and similar capacitive components. A string of at least three resonant networks is arranged between the high frequency r.f. source and the sputtering electrodes and these networks transform impedance and voltage from one end of the string at the source to different values and conditions at the other end of the string where they are tied to the electrodes in order to achieve a maximum of overall power transfer efficiency. The invention provides for tuning of the networks, matching of the impedances and variations of circuitry to achieve the desired ends for different types of sputtering target configurations.
Apparatus for supplying power efficiently to the discharge plasma load in a sputtering chamber by means of r.f. energy of a predetermined frequency in the megahertz range which comprises:
A power transfer circuit for feeding power at high voltage and at megahertz radio frequency to a sputtering target of relatively large area in a sputtering chamber having surrounding structure which, with the target produces an extremely low capacitive reactance shunting path across the plasma when formed so that the power prefers to be applied to the shunting path rather than to the plasma, said circuit adapted to be connected to a source of r.f. power at megahertz frequency whose voltage is less than that required across said plasma and whose internal impedance is of the same order as the impedance of said shunting path but is many times less than the impedance of the plasma, said circuit comprising:
Dependencies are inferred from the claim text.