Semiconductor device and method of manufacturing same

A method of manufacturing a semiconductor device having a semiconductor body of monocrystalline silicon, which comprises:

• providing an electrically insulating layer on the surface of said silicon semiconductor body;
• providing a window in said insulating layer to expose a portion of the silicon body surface;
• forming a surface zone of a first type conductivity at least partly adjacent the surface-adjoining portion of the silicon body exposed by said window;
• depositing a silicon layer from the gaseous phase on the insulating layer and on the exposed silicon surface within said window;
• doping at least a part of the silicon layer within said window in a first doping step to obtain a first silicon lower part of the first type conductivity, the first silicon layer part within the window contacting said surface zone of the first type conductivity;
• masking a part of the silicon layer extending within a part of the window and on the insulating layer outside the window;
• and
• converting a further nonmasked part of the silicon layer situated partly within the window and partly on the insulating layer outside the window to a second type conductivity opposite to that of the first type in a second doping step to obtain a second silicon layer part of the second type conductivity, said second silicon layer part being formed adjoining the first silicon layer part at least within said window.