Ion-implanted magnetic bubble memory
AssigneeBell Telephone Laboratories, Incorporated
InventorTerence J. Nelson
Life of this patent
Estimating the term…
Abstract
A gap between sets of contiguous discs defined by nonimplanted regions in an otherwise ion-implanted bubble layer allows an isolation between bubbles which leads to the achievement surprisingly close spacing between neighboring bubble paths. The misalignment of the gap axis with an axis of symmetry of the bubble layer is an important consideration in realizing the isolation.
Claims7
A magnetic bubble memory comprising a host layer of magnetic material in which magnetic bubbles can be moved along first and second paths in response to a magnetic field reorienting in the plane of said layer, a pattern of nonimplanted regions in said host layer for defining said paths in implanted regions thereabout, said nonimplanted regions defining first and second sets of periodic elements and an implanted gap separating said sets wherein said host layer has a three-fold axis of symmetry said memory being CHARACTERIZED IN THAT said gap has an axis aligned at about 90 degrees with respect to one of said axes of symmetry for permitting a relatively small gap to be achieved.
Dependencies are inferred from the claim text.