Semiconductor integrated circuit device including element for monitoring characteristics of the device

A semiconductor device comprising a semiconductor substrate, a plurality of transistor elements formed in said substrate, each of said transistor elements including a first base region, a first emitter region, and a first collector region in said substrate, at least one monitoring transistor element formed in said substrate and including a second base region, a second emitter region, and a second collector region in said substrate with substantially the same structure and size as said first base region, said first collector region, respectively, silicon electrodes formed on said first base region, said first emitter region and said first collector region, an insulating film selectively covering the major surface of said substrate, characteristic-monitoring electrodes of a silicon layer connected to said second base region, said second emitter region and said second collector region of said monitoring transistor element and extending on said insulating film, each of said characterstic-monitoring electrodes having a pad portion of said silicon layer on said insulating film remote from said monitoring transistor element and adapted to receive a probe of a measuring apparatus, and a metallic wiring layer connected to at least one of said silicon electrodes of said transistor element to be monitored.

A semiconductor integrated circuit device comprising a semiconductor substrate of one conductivity type, a plurality of island regions of the opposite conductivity type isolated from said substrate by a P-N junction, a plurality of circuit elements respectively formed in said plurality of island regions, each of said circuit elements including a first semiconductor region in said island region, a monitoring element formed in another of said island regions and including a second semiconductor region in said another island region having substantially the same structure and size as said first semiconductor region of said circuit element to be monitored, a silicon electrode contacted to said first semiconductor region of said circuit element to be monitored, an insulating film selectively covering the major surface of said substrate, a characteristic-monitoring electrode of a silicon layer connected to said second semiconductor region of said monitoring element and extending on said insulating film, said characteristic-monitoring electrode having a pad portion of said silicon layer on said insulating film remote from said monitoring element and adapted to receive a probe of a measuring apparatus, and a metallic wiring layer electrically connected to said first semiconductor region via said silicon electrode of said circuit element to be monitored.

A semiconductor device comprising a semiconductor substrate, an insulating film on the major surface of said substrate, a monitoring resistor element of a polycrystalline silicon formed on said insulating film, and first and second monitoring terminal electrodes formed of said polycrystalline silicon and connected to first and second parts of said monitoring resistor element, respectively, and extending on said insulating film, each of said monitoring terminal electrodes having a portion of said polycrystalline silicon on said insulating film remote from said monitoring resistor and adapted to receive a probe of a charactertistics-measuring apparatus.