Conductor crossovers for integrated RC-circuits
AssigneeSiemens Aktiengesellschaft
InventorsWolf-Dieter Muenz, Hans W. Poetzlberger
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Abstract
A method is disclosed for the manufacture in electric thin film R and RC circuits of a conductor crossover. A first conductor is structured at the crossover from a TaAl double layer. A portion of the top layer of the double layer is converted to a TaAl oxide and an SiO.sub.2 layer is then applied over the TaAl oxide as a double dielectric. A second conductor is then structured over the double dielectric.
Claims6
A method for the manufacture of a conductor crossover formed of a crossover region with a crossunder path and a crossover path and leads connecting to the crossover and crossunder paths, all in a thin film integrated circuit, comprising the steps of:
- (a) providing an insulating base and applying a TaAl double layer thereon, the double layer comprising a first bottom TaAl layer of higher tantalum content and a second upper TaAl layer of lower tantalum content;
- (b) in a first photo-technique, masking the desired crossunder path and associated leads and also the desired leads for the crossover path, and then etching away unmasked portions of the double layer;
- (c) oxidizing the remaining portions of the double layer to create a TaAl-oxide layer;
- (d) applying an SiO.sub.2 layer over the structure formed thus far;
- (e) in a second photo-technique, masking the desired crossover region and etching off unmasked SiO.sub.2 and TaAl-oxide layers;
- (f) using the remaining SiO.sub.2 in the crossover region as a mask, etching off unmasked TaAl second layer from the leads of the crossunder and crossover paths;
- (g) applying an electrically highly conductive layer over the structure formed thus far;
- and
- (h) in a third photo-technique, masking the desired crossover path and the leads of the crossover and crossunder paths and etching away unmasked portions of the conductive layer.
A method for the manufacture of a non-temperature compensated TaAl RC network having a conductor crossover formed of a crossover region with a crossunder path and a crossover path and leads connecting to the crossover and crossunder paths, all in a thin film integrated circuit, comprising the steps of:
- (a) providing an insulating base and applying a TaAl double layer thereon, the double layer comprising a first portion TaAl layer of higher tantalum content and a second upper TaAl layer of lower tantalum content;
- (b) in a first photo-technique, masking the desired crossunder path and associated leads and also the desired leads for the crossover path, and then etching away unmasked portions of the double layer;
- (c) oxidizing the remaining portions of the double layer to create a TaAl-oxide layer;
- (d) applying a polyimide layer over the structure formed thus far;
- (e) in a second photo-technique, masking the desired crossover region and etching off unmasked polyimide and TaAl-oxide layers;
- (f) using the remaining polyimide in the crossover region as a mask, etching off unmasked TaAl second layer from the leads of the crossunder and crossover paths;
- (g) applying an electrically highly conductive layer over the structure formed thus far;
- and
- (h) in a third photo-technique, masking the desired crossover path and the leads of the crossover and crossunder paths and etching away unmasked portions of the conductive layer.
A method for the manufacture of a resistance network conductor crossover formed of a crossover region with a crossunder path and a crossover path and leads connecting to the crossover and crossunder paths, all in a thin film integrated circuit, comprising the steps of:
- (a) providing an insulating base and applying a TaAl double layer thereon, the double layer comprising a first bottom TaAl layer of higher tantalum content and a second upper TaAl layer of lower tantalum content;
- (b) in a first photo-technique, masking the desired crossunder path and associated leads and also the desired leads for the crossover path, and then etching away unmasked portions of the double layer;
- (c) applying a polyimide layer over the structure formed thus far;
- (d) in a second photo-technique masking the desired crossover region and etching off the unmasked polyimide layer;
- (e) applying an electrically highly conductive layer over the structure formed thus far;
- (f) in a third photo-technique, masking the desired crossover path and the leads of the crossover and crossunder paths and etching away unmasked portions of the conductive layer;
- and
- (g) using the conductive layer as a mask, etching off unmasked TaAl second layer.
Dependencies are inferred from the claim text.