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US 4,283,439 AGranted
Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode
AssigneeVLSI Technology Research Association
InventorsIwao Higashinakagawa, Syohei Sima, Takahiko Moriya
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Abstract
A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.
Claims6
A method of making a semiconductor device comprising the steps of:
- forming an interconnection electrode comprising a silicide of a refractory metal selected from the group consisting of molybdenum and tungsten on an insulating film formed on a semiconductor substrate;
- forming a silicon nitride film on the interconnection electrode in an atmosphere containing ammonia gas and silane gas;
- forming a silicon oxide film on the silicon nitride film;
- selectively etching the silicon oxide film and the silicon nitride film to form a contact hole;
- and
- forming a metal electrode layer on the silicon oxide film and the interconnection electrode through said contact hole.
3 more elements
A method of making a semiconductor device comprising of the steps of:
- forming an interconnection electrode comprising a silicide of a refractory metal selected from the group consisting of molybdenum and tungsten by sputtering or chemical vapor deposition on an insulating film formed on a semiconductor substrate;
- forming a silicon nitride film on the interconnection electrode in an atmosphere containing ammonia gas and silane gas;
- forming a silicon oxide film on the silicon nitride film;
- selectively etching the silicon oxide film and the silicon nitride film to form a contact hole;
- and
- forming a metal electrode layer on the silicon oxide film and the interconnection electrode through said contact hole.
3 more elements
Dependencies are inferred from the claim text.