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AssigneeStandard Microsystems Corporation
InventorPaul Richman
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A method for fabricating an MOS integrated circuit having a refractory metal gate structure includes the formation of an insulating layer and a conductive refractory metal layer on a substrate, followed by the selective removal of portions of these layers to define the locations of source, drain, and other diffused regions. After the diffusion or implantation of the drain and source regions, using the refractory metal as a mask, the refractory metal, other than at the gate regions, is removed, and the portion of the underlying insulating layer that is thereby exposed is then etched away. An oxidizing step is performed to form a thick oxide region at those areas of the substrate not covered by the remaining portions of the refractory metal layer. Also disclosed is an MOS refractory metal gate MOS device fabricated by the method.
A process for fabricating as MOS device comprising the steps of (a) providing a substrate of a first conductivity type, (b) forming on said substrate an insulating layer and an overlying refractory metal layer, (c) selectively removing portions of said refractory metal and the underlying portion of said insulating layer to define openings at the locations of source and drain regions, (d) introducing impurities of an opposite conductivity type through said openings into the exposed upper surface of said substrate to form source and drain regions, (e) removing the portions of said refractory metal remaining over the field regions while allowing the refractory metal to remain over predetermined gate regions;
A process for fabricating an MOS device comprising the steps of providing a substrate of a first conductivity type, forming a refractory metal layer and an underlying insulating layer on said substrate, selectively removing portions of said refractory metal layer and said underlying insulating layer to define openings at the locations of source and drain regions, introducing impurities of an opposite conductivity type through said openings into the exposed upper surface of said substrate to form source and drain regions using the remaining portion of said refractory metal layer as a barrier to the impurities, removing an additional portion of said refractory metal while allowing refractory metal to remain over predetermined gate regions, oxidizing the surface of said substrate to form an oxide region at locations other than those protected by said refractory metal layer using the remaining refractory metal as an oxidation barrier, and thereafter selectively forming an overlying metalization pattern.
The process of claim, 9, further comprising the step of introducing impurities of said first conductivity type into the surface of said substrate.
Dependencies are inferred from the claim text.