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US 4,282,077 AGranted
Uniform plasma etching system
AssigneeGeneral Dynamics, Pomona Division
InventorJoseph A. Reavill
Life of this patent
Estimating the term…
Abstract
A uniform plasma etching system includes a plasma reaction chamber with a source of reactive gas communicating therewith and an RF generator connected to individual electrodes located in the plasma chamber, the electrodes arranged for defining separate part cells and separate plasma generating chambers between the separate cells and means for individually and separately adjusting each of the cells.
Claims9
A uniform plasma etching system comprising in combination:
- a chamber;
- a source of reactive gas for supplying to said chamber;
- an RF generator coupled to said chamber for generating a plasma therein;
- and
- a plurality of part cells within said chamber formed by pairs of generally opposed electrodes of the same polarity and plasma cells at each side of said part cells, each of said part cells being separated from each adjacent part cell by a plasma cell, each of said plasma cells being defined by adjacent generally opposed electrodes of opposite polarity positioned to generate plasma externally of the adjacent part cell.
2 more elements
A method of uniform plasma etching of parts comprising the steps of:
- selecting a plasma reaction chamber having a source of gas and means for selectively adjusting the gas pressure in said chamber;
- selecting and arranging a plurality of pairs of generally opposed electrodes of like polarity for defining a plurality of individual part cells within said chamber separated by plasma generating cells, each formed by a pair of generally opposed electrodes of opposite polarity;
- and
- placing a separate part in separate ones of said individual part cells.
1 more element
Dependencies are inferred from the claim text.