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US 4,276,616 AGranted
Merged bipolar/field-effect bistable memory cell
AssigneeFairchild Camera and Instrument Corporation
InventorFalke Hennig
Life of this patent
Estimating the term…
Abstract
A compact bistable semiconductor memory cell usable in static electronic information storage devices includes a field-effect transistor merged with a bipolar transistor for storing a binary information bit.
Claims15
A semiconductor memory cell comprising:
- a bipolar transistor having an emitter, a base, and a collector, said cell being bistable, a first stable state existing in said cell when said bipolar transistor is conducting and a second stable state existing in said cell when said bipolar transistor is substantially not conducting;
- and
- a current-supply field-effect transistor having a source, a gate electrode, and a drain, said base integral with said drain and said collector coupled to said gate electrode.
A memory cell comprising:
- a bipolar transistor having a first emitter/collector, a base, and a second emitter/collector, said cell being bistable, a first stable state existing in said cell when said bipolar transistor is conducting and a second stable state existing in said cell when said bipolar transistor is substantially not conducting;
- and
- a field-effect transistor having a source, a gate electrode, and a drain, said base integral with said drain and said second emitter/collector coupled to said gate electrode.
Dependencies are inferred from the claim text.