Integrated semiconductor circuit structure and method for making it
AssigneeBell Telephone Laboratories, Incorporated
InventorsHyman J. Levinstein, Shyam P. Murarka, Ashok K. Sinha
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Abstract
The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
Claims7
A semiconductor arrangement comprising a semiconductor chip including a single crystal semiconductor layer, a first electrically-insulating SiO.sub.2 layer overlying said semiconductor layer, a layer of doped polysilicon having a thickness greater than 2000 Angstrom units overlying said first SiO.sub.2 layer, a first layer of electrically-conducting material overlying said polysilicon layer, said electrically-conducting material being taken from a class consisting of TiSi.sub.2 and TaSi.sub.2 and an unpatterned second layer of SiO.sub.2 overlying said first electrically-conducting layer.
Dependencies are inferred from the claim text.