Method of forming a sheet of single crystal semiconductor material
OwnerAllen L. Kerlininventor
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Abstract
Apparatus for forming thin layers of material such as single crystalline silicon includes a container having a generally cylindrical interior surface. The container is rotatably mounted and movable through a heater. In forming the layer of material, the material is heated in the container to a temperature above the material melting point. The container is rotated whereby the liquid material adheres to the interior surface of the container by centrifugal force. The container is slowly cooled beginning at one end thereof whereby the layer of material solidifies.
Claims11
The method of forming a sheet of crystalline semiconductor material comprising the steps of
- providing a rotatable container having a generally cylindrical interior surface,
- placing material in said container,
- spinning and heating said container at a temperature above the melting point of said material whereby all material is liquid, and
- slowly cooling said container beginning at one end thereof whereby said material solidifies directionally as a thin layer confined by said interior surface.
Apparatus for forming thin sheets of crystalline semiconductor material comprising
- a container having a generally cylindrical interior surface, said interior surface including a confined area for retaining the material with a neck portion means for effecting single crystal growth,
- means for rotating said container about the axis of said generally cylindrical interior surface,
- heater means for heating all of said container, and
- means for incrementally cooling said container from one end of said container to the other end of said container.
Dependencies are inferred from the claim text.