Electrophotographic photosensitive member and process for production thereof
AssigneeCanon Kabushiki Kaisha
InventorsYutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Teruo Misumi, Tadaji Fukuda
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Abstract
A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.
Claims20
An electrophotographic photosensitive member comprising a substrate for electrophotography and a photoconductive layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, and said photoconductive layer having a high dark resistance and a high SN ratio for electrophotographic processing.
An electrophotographic photosensitive member comprising a substrate for electrophotography, a barrier layer capable of preventing injection of electric carrier from said substrate side when the charging treatment is applied to said photosensitive member, and a photoconductive layer overlying said barrier layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, and said photoconductive layer having a high dark resistance and a high SN ratio for electrophotographic processing.
An electrophotographic photosensitive member comprising a substrate for electrophotography, a photoconductive layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, said photoconductive layer also having a high dark resistance and a high SN ratio for electrophotographic processing, and a covering layer overlying the surface of said photoconductive layer, said covering layer being 0.5-70 microns in thickness.
Dependencies are inferred from the claim text.