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US 4,261,781 AGranted
Process for forming compound semiconductor bodies
AssigneeInternational Business Machines Corporation
InventorsHarold D. Edmonds, Vincent J. Lyons, Gary Markovits
Life of this patent
Estimating the term…
Abstract
Compound semiconductor bodies are formed by bonding a layer of supporting material to the two opposite faces of a semiconductor wafer and then cutting the semiconductor wafer into two parts in a plane parallel to said faces. The cut surface of each part is then polished.
Claims7
A process for forming compound semiconductor bodies comprising joining a layer of support material to each of the two opposite major faces of a semiconductor wafer and cutting the wafer into two portions in a plane between and substantially parallel to said opposite major faces.
Dependencies are inferred from the claim text.